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to-126c plastic-encapsulate transistors 2sd794/794a transis tor (npn) features z high v oltage and large c urrent c apacity z complementary to 2sb744,2sb744a maximum ratings (t a =25 unless otherwise noted ) symbol par dphwhu value 8qlw v cbo collector-base voltage 70 v v ceo collector-emitter voltage 2sd794 2SD794A 45 60 v v ebo emitter-base voltage 5 v i c collector current -continuous 3 a p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -55 to +150 electrical char acteristics (t a = 25 unless otherwise specified ) parameter symbol t est cond ition s m in t yp max u nit collector-base breakdown voltage v (br)cbo i c = 100 a,i e =0 70 v collector-emitter breakdown voltage v (br)ceo i c = 1 ma,i b =0 2sd794 2SD794A 45 60 v emitter-base breakdown voltage v (br)ebo i e = 100 a,i c =0 5 v collector cut-off current i cbo v cb = 45 v,i e =0 1 a emitter cut-off current i ebo v eb = 3 v,i c =0 1 a h fe(1) v ce = 5 v,i c = 20 ma 30 dc current gain h fe(2) v ce = 5 v,i c = 0.5 a 60 320 collector-emitter saturation voltage v ce(sat) i c = 1.5 a,i b = 0.15 a 2 v base-emitter saturation voltage v be(sat) i c = 1.5 a,i b = 0.15 a 2 v transition frequency f t v ce = 5 v,i c = 100 ma 60 mhz collector output capacitance c ob v cb = 10 v,i e =0,f= 1 mhz 40 pf classific ation of h fe(2) rank r q p range 60-120 100-200 160-320 to- 126c 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,aug,2012

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